一种高速大电流开关驱动器的设计与实现

设计并实现了一种高速大电流的开关驱动器,可用于驱动PIN开关以及IGBT开关等.开展了系统结构、电路和版图技术研究,并采用亚微米CMOS标准工艺进行设计和制造.通过采用一种带隙基准结构提供偏置的方式使电路兼容TTL和CMOS输入,保证良好的温度特性;通过采用传输门功率驱动电路实现三态控制,解决了高速应用时电容馈通效应问题.详细设计了TTL输入转换电路、基准和偏置电路、三态输出和功率驱动等电路;基于0.6 μm CMOS工艺重点设计了高速驱动器中功率开关版图.该高速大电路开关驱动器产品的传输速度达到了25 ns,驱动电流达500 mA.

Design and Implementation of a High-Speed and High-Current Switch Driver

A high-speed and high-current switch driver which could be applied in driving the PIN switch and IGBT switch was designed and implemented.The system structure,circuit and layout technology were researched,and it was designed and manufactured by using the submicron CMOS standard process.The circuit was compatible with TTL and CMOS inputs by using a bandgap reference structure that provided a bias to ensure good temperature characteristics.The transmission gate power driving circuit was used to achieve three-state control,which could solve the capacitor feedthrough effect in high speed applications.Meanwhile,the TTL input conversion circuit,reference and bias circuit,threestate output and power driving circuit were designed in detail.And based on the 0.6 μm CMOS process,the layout of the power switch in the high-speed driver was designed.The high-speed and high-current switch driver performs a transmission speed of up to 25 ns and a drive current of up to 500 mA.