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超细碳化硅表面改性技术进展
引用本文:王杏,关荣锋,田大垒. 超细碳化硅表面改性技术进展[J]. 中国陶瓷工业, 2008, 15(2): 10-13
作者姓名:王杏  关荣锋  田大垒
作者单位:河南理工大学材料科学与工程学院,焦作,454003
摘    要:超细碳化硅(SiC)颗粒优异的物理化学性能和广泛的应用领域成为陶瓷颗粒表面改性研究的一个热点。介绍了超细SiC颗粒改性的目的和机理,从物理改性、化学改性两个方面对改性方法及研究进展情况进行了总结,并在此基础上指出了超细SiC颗粒的表面改性面临的主要问题。

关 键 词:碳化硅  表面改性  包覆  接枝改性
文章编号:1006-2874(2008)02-0010-03
修稿时间:2007-11-21

PROGRESS IN SURFACE MODIFICATION OF ULTRA FINE SILICON CARBIDE
Wang Xing,Guan Rongfeng,Tian Dalei. PROGRESS IN SURFACE MODIFICATION OF ULTRA FINE SILICON CARBIDE[J]. China Ceramic Industry, 2008, 15(2): 10-13
Authors:Wang Xing  Guan Rongfeng  Tian Dalei
Affiliation:(Institute of Materials Science and Engineering of Henan Polytechnic University,454003)
Abstract:Ultra fine silicon carbide has become an important aspect in the surface modification of ceramic particles because of excellent physical and chemical performances as well as broad application. In this paper, the aim and mechanism of ultra fine silicon carbide modification were introduced. Methods and research progress were summarized in terms of physical and chemical modification. What's more, major problems in ultra fine silicon carbide modification were presented.
Keywords:silicon carbide   surface modification   coating   graft modification
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