| SOI结构制备工艺进展 |
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| 引用本文： | 樊瑞新. SOI结构制备工艺进展[J]. 材料科学与工程学报, 2000, 18(2): 100-104 |
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| 作者姓名： | 樊瑞新 |
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| 作者单位： | 浙江大学硅材料国家重点实验室!杭州，310027 |
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| 基金项目： | 国家自然科学基金! (6 9776 0 0 6 ) |
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| 摘 要： | 绝缘体上生长的薄单晶硅膜 (SOI)具有良好的横向绝缘、抗辐照、无锁存效应和无寄生电容 ,并能有效地提高硅集成电路的速度和集成度 ,在深亚微米 VL SI技术中 ,具有很大的优势和潜力。本文简单地介绍了 SOI材料的结构特性和制备方法及当前发展状况 ,同时 ,也指出 SOI进一步实用化所需解决的问题及应用前景。
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| 关 键 词： | SOI 薄膜 |
Preparations of Silicon on Insulator |
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| FAN Ruixin. Preparations of Silicon on Insulator[J]. Journal of Materials Science and Engineering, 2000, 18(2): 100-104 |
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| Authors: | FAN Ruixin |
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| Abstract: | Silicon on insulator(SOI) structure, as a very large scale integrated circuit(VLSI) wafer, has attractive features such as radiationhardening, no parasitic capacitance and latchup effect. In this paper, the characteristics and preparation method of SOI are described. In addition, the problems to be resolved necessary for practical application of SOI are pointed out. |
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| Keywords: | Silicon on insulator thin film |
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