| 0.3K下的GaAs/Al_xGa_(1-x)As异质结中的分数量子霍耳效应 |
| |
| 引用本文： | 杨富华,程文超,郑厚植,周海平.0.3K下的GaAs/Al_xGa_(1-x)As异质结中的分数量子霍耳效应[J].半导体学报,1988,9(1):96-99. |
| |
| 作者姓名： | 杨富华 程文超 郑厚植 周海平 |
| |
| 作者单位： | 中国科学院半导体研究所 北京
(杨富华，程文超，郑厚植)，中国科学院半导体研究所 北京(周海平) |
| |
| 摘 要： | 本文从实验上比较了低浓度 GaAs/Al_xGa_(1-x)As异质结样品在4.2K、1.3K和0.34K 温度下的整数量子霍耳效应,报道了填充因子v=2/3的分数量子霍耳效应的实验观察结果.讨论了低浓度GaAs/Al_xGa_(1-x)As样品中宏观不均匀性对实验结果的影响.
|
| 关 键 词： | 镓砷-铝镓砷 异质结 分数量子霍耳效应 |
Fractional Quantized Hall Effect at 0.3K in GaAs/Al_x Ga_(1-x)As Heterostructure |
| |
| Yang Fuhua/Institute of Semicanductors,Academia Sinica,BeijingCheng Wenchao/Institute of Semicanductors,Academia Sinica,BeijingZheng Houzhi/Institute of Semicanductors,Academia Sinica,BeijingZhou Haiping/Institute of Semicanductors,Academia Sinica,Beijing.Fractional Quantized Hall Effect at 0.3K in GaAs/Al_x Ga_(1-x)As Heterostructure[J].Chinese Journal of Semiconductors,1988,9(1):96-99. |
| |
| Authors: | Yang Fuhua/Institute of Semicanductors Academia Sinica BeijingCheng Wenchao/Institute of Semicanductors Academia Sinica BeijingZheng Houzhi/Institute of Semicanductors Academia Sinica BeijingZhou Haiping/Institute of Semicanductors Academia Sinica Beijing |
| |
| Abstract: | Integer quantized Hall effects (IQHE) in GaAs/Al_xGa_(1-x)As heterostructure with low ele-ctron density are compared at different temperatures 4.2 K.1.3 K and 0.34 K, while fractionalquantized Hall effect (FQHE) is identified at filling factor v=2/3 as the temperature is downto 0.34 K.The observed influence of the temperature on IQHE is consistent with the presentphysical model.However,lower temperature and higher mobility are more crucial for the ob-servation of FQHE.Finally,the effects of the macroscopic imhomogeneity of the sample onIQHE and FQHE are discussed. |
| |
| Keywords: | GaAs-AlGaAs Heferostructure Fractional quantized Hall effect |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
