| 应用于5GHz频段带ESD保护的可变增益低噪声放大器 |
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| 引用本文： | 张浩,李智群,王志功,章丽,李伟. 应用于5GHz频段带ESD保护的可变增益低噪声放大器[J]. 半导体学报, 2010, 31(5): 055005-6 |
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| 作者姓名： | 张浩 李智群 王志功 章丽 李伟 |
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| 作者单位： | Institute;RF-&;OE-ICs;Southeast;University; |
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| 基金项目： | 国家高技术研究发展计划 |
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| 摘 要： | 本文给出了应用于5GHz频段的可变增益低噪声放大器。详细分析了输入寄生电容对源极电感负反馈低噪声放大器的影响，给出了一种新的ESD和LNA联合设计的方法，另外，通过在第二级中加入一个简单的反馈回路实现了增益的可变。测试结果表明： 可变增益低噪声放大器增益变化范围达25dB (-3.3dB～21.7dB)，最大增益时噪声系数为2.8dB，最小增益时三阶截点为1dBm，在1.8V电源电压下功耗为9.9mW。
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| 关 键 词： | 低噪声放大器 ESD保护 可变增益 GHz CMOS 应用 抗寄生电容 设计方法 |
| 修稿时间： | 2010-01-05 |
A CMOS variable gain low-noise amplifier with ESD protection for 5 GHz applications |
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| Zhang Hao,Li Zhiqun,Wang Zhigong,Zhang Li and Li Wei. A CMOS variable gain low-noise amplifier with ESD protection for 5 GHz applications[J]. Chinese Journal of Semiconductors, 2010, 31(5): 055005-6 |
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| Authors: | Zhang Hao Li Zhiqun Wang Zhigong Zhang Li Li Wei |
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| Affiliation: | Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China;Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China |
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| Abstract: | This paper presents a variable gain low-noise amplifier(VG-LNA) for 5 GHz applications.The effect of the input parasitic capacitance on the inductively degenerated common source LNA's input impedance is analyzed in detail.A new ESD and LNA co-design method was proposed to achieve good performance.In addition,by using a simple feedback loop at the second stage of the LNA,continuous gain control is realized.The measurement results of the proposed VG-LNA exhibit 25 dB(-3.3 dB to 21.7 dB) variable gain range,2.... |
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| Keywords: | continuous variable gain low-noise amplifier electrostatic discharge co-design CMOS |
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