利用发射光谱研究ECR等离子体对钨的刻蚀

研究不同刻蚀条件下等离子体对钨表面的刻蚀变化,并对其原因进行分析有助于进一步了解其对钨的刻蚀机理,从而为如何提高钨材料的使用寿命提供一定的理论支撑.采用光纤光谱仪(Avaspec—ULS2048一USB2)检测在不同放电条件下电子回旋共振(electron cyclotron resonance,ECR)等离子体中受激发的钨原子、钨离子谱线的相对强度,从而根据其谱线的相对强度可以直接地反映出不同刻蚀条件下的等离子体对钨表面刻蚀的强弱规律.结果表明:偏压越大对钨表面的刻蚀越严重,气压则呈现先增大后减小的趋势;在N_2-Ar混合气体中随着N,体积分数的增加对钨的刻蚀逐渐增强;而对比He、N,和Ar三种气体,He等离子体对钨的刻蚀最为严重;在700 W、0.1 Pa条件下,0~175 V偏压范围的He等离子体对轧制态钨的刻蚀比再结晶态钨严重,而在175 V之后结果却相反.

ECR Plasma Etching of Tungsten by Emission Spectrum

The etching of the plasma on the surface of tungsten under different etching conditions was studied,and analysis of its causes is helpful to further understanding the etching mechanism of tungsten in order to provide a certain theoretical support for how to improve the life of tungsten. By using Optical fiber spectrometer, the relative intensity of the excited tungsten atoms and tungsten ion spectra in the ECR plasma excited by different discharge conditions was directly reflected by the relative intensity of the spectra. The results show that the higher the bias voltage, the more severe the etching of the tungsten surface, and the pressure increased. The etching of tungsten increased with the increase of N2 content in N2-Ar mixture gas. While in contrast to the three types of gas of He, N2, and Ar, the etching of He plasma was the most serious. Under the condition of 700 W and 0. 1 Pa, the etching of He plasma on the Rolling state tungsten was more serious than Re-crystalline tungsten in the range of 0-175 V, but the result was opposite after 175 V.