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Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs |
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| Authors: | JM Rafí E Simoen K Hayama A Mercha F Campabadal H Ohyama C Claeys |
| Affiliation: | aCentro Nacional de Microelectrónica (IMB-CNM-CSIC), Campus UAB, 08193 Bellaterra (Barcelona), Spain;bIMEC, Kapeldreef 75, B-3001 Leuven, Belgium;cKumamoto National College of Technology, 2569-2 Nishigoshi, Kumamoto 861-1102, Japan;dKU Leuven, Department of Electrical Engineering, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium |
| Abstract: | The impact of hot-carrier degradation on drain current (ID) hysteresis and switch-off ID transients of thin gate oxide floating body PD SOI nMOSFETs is analyzed. An extended characterization of these floating body effects (FBEs) is carried out for a wide range of transistor geometries and bias conditions. The results show a link between the hot-carrier-induced damage of the front channel and the reduction of the FBEs. This is further supported by unbiased thermal annealing experiments, which are found to give rise to a partial recovery of the hot-carrier induced damage and FBEs. |
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