Irradiation induced growth of CoSi2 precipitates in Si at 650°C: An in situ study

Crystalline Si samples were implanted at 350°C with 50 keV Co⁺ ions to a fluence of 10¹⁵ Co cm^?2. Small CoSi₂ precipitates were formed. We studied the precipitate growth, via in situ transmission electron microscopy, under irradiation with 100 keV Si ions at 650°C. We deduce the precipitate growth processes involved. Irradiation-induced (or enhanced) Ostwald ripening is the main growth mechanism. We also find an instability of the B-type precipitates, which leads to their transformation into A-type precipitates above a critical size. These preliminary results show that direct comparisons with kinetic Monte Carlo modelling of the precipitate growth is at hand.