基底材料对沉积氮化钛薄膜及其性能的影响 |
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引用本文: | 付淑英. 基底材料对沉积氮化钛薄膜及其性能的影响[J]. 中国材料科技与设备, 2014, 0(1): 10-12 |
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作者姓名: | 付淑英 |
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作者单位: | 韩山师范学院物理与电子工程系,广东潮州521041 |
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摘 要: | 研究了利用直流反应磁控溅射法,以Si—P(111)和Si—P(100)两种不同Si片做基底,对制备TiNx薄膜性能的影响。结果表明,以Si--p(111)为基底制备的TiNx薄膜性能优于Si--p(100)基底,表现在颗粒更细润,XRD衍射峰峰形更明锐且与TiNx的衍射峰不会重叠。因而,选用p--Si(111)做基底沉积氮化钛薄膜,可满足制备光学薄膜质量方面的要求。
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关 键 词: | 基底材料 氮化钛薄膜 薄膜性能 沉积 直流反应磁控溅射法 薄膜质量 衍射峰 Si |
Basal Material Impact on Nitride Thin Films the Deposition of Titanium and Their Properties |
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Affiliation: | FU Shu -- ying (Physics and Electronic Engineering Department of Hanshan Normal University, Guangdong, Chaozhou, 521041, China) |
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Abstract: | Studied by dc reactive magnetron sputtering method, with Si -- p and Si (111) -- p (100), two different Si do base, affect the performance of TiNx thin film preparation. Results show that Si -- of the preparation of p (111) as the basal TiNx film performance is better than that of Si -- p (100), the performance in the particles more renew, more Octavia and XRD diffraction fengfeng shape with TiNx diffraction peak do not overlap. Therefore, choose p -- Si (111) basal deposited titanium nitride thin films, can meet the requirements of the preparation of optical thin film quality. |
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Keywords: | TiN thin films Magnetron sputtering Si substrate |
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