Analysis and decomposition of spatial variation in integratedcircuit processes and devices

Variation is a key concern in semiconductor manufacturing and is manifest in several forms. Spatial variation across each wafer results from equipment or process limitations, and variation within each die may be exacerbated further by complex pattern dependencies. Spatial variation information is important not only for process optimization and control, but also for design of circuits that are robust to such variation. Systematic and random components of the variation must be identified, and models relating the spatial variation to specific process and pattern causes are needed. In this work, extraction and modeling methods are described for wafer-level, die-level, and wafer-die interaction contributions to spatial variation. Wafer-level estimation methods include filtering, spline, and regression based approaches. Die-level (or intra-die) variation can be extracted using spatial Fourier transform methods; important issues include spectral interpolation and sampling requirements. Finally, the interaction between wafer- and die-level effects is important to fully capture and separate systematic versus random variation; spline- and frequency-based methods are proposed for this modeling. Together, these provide an effective collection of methods to identify and model spatial variation for future use in process control to reduce systematic variation, and in process/device design to produce more robust circuits