磁控溅射制备Ti-Ni-Cu记忆薄膜与组织成分研究

优化直流磁控溅射Ti-Ni-Cu薄膜的制备工艺参数,研究薄膜的组织结构、成分与工艺参数对其的影响规律。采用SEM、TEM、XRD及EMPA对其系统研究分析。结果表明,经650℃、0.5h退火,溅射态的非晶无序结构的Ti-Ni-Cu薄膜完全晶化,获得形状记忆效应。室温下基体组织为立方结构的B2相。溅射薄膜的厚度与时间几乎呈线性变化;而薄膜的沉积速率随着溅射功率的增大而升高,但溅射功率再增大则沉积速率降低;薄膜的成分随溅射功率、工作气压及时间的变化基本一致,不存在成分离散问题。

Study of preparation, microstructure and composition of Ti-Ni-Cu memory thin film by magnetron sputtering deposition

DC sputtering process parameters of preparing Ti-Ni-Cu thin films were optimized,and the influence of micro structure,composition and process parameters was studied by means of SEM,TEM,XRD and EMPA.It was shown that the as-deposited thin films annealed at 650 ℃ for 0.5 h went through amorphous state to fully crystallized and gained its shape memory effects.The micro structure at room temperature is B2 of BCC.The thickness of sputting thin films increased linearly with time, deposit speed rate of thin films increased with sputting power increasing,and then reduced if sputting power still rised,composition of thin films is consistent basicly with change of sputting power and time.