| Chemical Thermodynamic Analysis of Silicon Doping in MOCVD of GaAs System |
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| 作者姓名： | 任红文 蒋民华 刘立强 黄柏标 |
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| 作者单位： | Institute of Crystal Materials Shandong University，Jinan 250100，China，Institute of Crystal Materials，Shandong University，Jinan 250100，China，Institute of Crystal Materials，Shandong University，Jinan 250100，China，Institute of Crystal Materials，Shandong University，Jinan 250100，China |
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| 摘 要： | With chemical thermodynamic method,enthalpies,entropies and heat capacities of(SiH_3)_nAsH_(3-n)(1≤n≤3),(CH_3)_mSiH_(4-m)(1≤m≤4)and their radicals were calculated.Homogeneous reactions equilibrium of 65gas phase species in SiH_4(or Si_2H_6)doped MOCVD GaAs by TMG and AsH_3 system was analyzed,the re-lations of gas phase partial pressures with growth temperatures and input partial pressures were calculated.When the gas phase is saturated with a GaAs:Si solid,the gas phase partial pressures and solid phase siliconimpurity(Si_(Ga)-As,Ga-Si_(As),Si_(Ga)-Si_(As))concentrations were calculated under different growth temperatures andinput partial pressures.With the above results,some of the Si doping behavior in MOCVD of GaAs are ex-plained.
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Chemical Thermodynamic Analysis of Silicon Doping in MOCVD of GaAs System |
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| Ren Hongwen,Jiang Minhua,Liu Liqiang,Huang Baibiao Institute of Crystal Materials,Shandong University,Jinan ,China.Chemical Thermodynamic Analysis of Silicon Doping in MOCVD of GaAs System[J].Rare Metals,1993(2). |
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| Authors: | Ren Hongwen Jiang Minhua Liu Liqiang Huang Baibiao Institute of Crystal Materials Shandong University Jinan China |
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| Affiliation: | Ren Hongwen,Jiang Minhua,Liu Liqiang,Huang Baibiao Institute of Crystal Materials,Shandong University,Jinan 250100,China |
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| Abstract: | |
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| Keywords: | Chemical thermodynamics Equilibrium Si doping GaAs MOCVD |
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