| InAs/GaAs自组织量子点激发态的激射 |
| |
| 引用本文： | 汪辉,牛智川,王海龙,王晓东,封松林. InAs/GaAs自组织量子点激发态的激射[J]. 半导体学报, 2001, 22(3): 295-298 |
| |
| 作者姓名： | 汪辉 牛智川 王海龙 王晓东 封松林 |
| |
| 作者单位： | [1]中国科学院半导体研究所半导体超晶格和微结构国家重点实验室，北京100083 [2]中国科学院半导体研究所半导体超晶 |
| |
| 摘 要： | 将覆盖层引入生长停顿的量子点结构作为激光器有源区来研究量子点激光器受激发射机制 .由于强烈的能带填充效应 ,光致发光谱和电致发光谱中观察到对应于量子点激发态跃迁的谱峰 ,大激发时其强度超过基态跃迁对应的谱峰 .最后激发态跃迁达到阈值条件 ,激射能量比结构相似但不含量子点的激光器低 ,表明量子点激光器中首先实现受激发射是量子点的激发态
|
| 关 键 词： | 自组织量子点 量子点激光器 受激发射 能带填充效应 |
| 文章编号： | 0253-4177（2001）03-0295-04 |
| 修稿时间： | 2000-02-18 |
Excited-State Lasing of InAs/GaAs Self-Organized Quantum Dot |
| |
| WANG Hui,NIU Zhi chuan,WANG Hai long,WANG Xiao dong and FENG Song lin. Excited-State Lasing of InAs/GaAs Self-Organized Quantum Dot[J]. Chinese Journal of Semiconductors, 2001, 22(3): 295-298 |
| |
| Authors: | WANG Hui NIU Zhi chuan WANG Hai long WANG Xiao dong FENG Song lin |
| |
| Abstract: | To investigate the origin of stimulated emission of a Quantum Dot (QD) laser, lasers with or without QDs as active region have been grown by MBE According to the PL and EL properties, the QD energy levels in QD laser are distinctively resolved due to the band filling effect, and the lasing energy is realized at the excited level, which is much lower than that of the laser with only a wetting layer The reported QD laser has proved to be lasing from the excited state of quantum dots |
| |
| Keywords: | self organized quantum dots QD laser stimulated emission band filling effect |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
