Morphological, structural, and mechanical characterizations of InGaN thin films deposited by MOCVD |
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| Authors: | Ping-Feng Yang Sheng-Rui Jian Yi-Shao Lai Chu-Shou Yang Rong-Sheng Chen |
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| Affiliation: | aCentral Labs, Advanced Semiconductor Engineering Inc., 26 Chin 3rd Road, Nantze Export Processing Zone, Nantze, 811 Kaohsiung, Taiwan;bDepartment of Engineering Science, National Cheng Kung University, 701 Tainan, Taiwan;cDepartment of Materials Science and Engineering, I-Shou University, 840 Kaohsiung, Taiwan;dDepartment of Electrophysics, National Chiao Tung University, 300 Hsinchu, Taiwan |
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| Abstract: | Presented in this study are surface roughness, crystalline structure, and nanomechanical properties of InGaN thin films deposited under various growth temperatures, obtained by means of X-ray diffraction (XRD), atomic force microscopy (AFM), and nanoindentation techniques. The InGaN thin films with different In contents were deposited on sapphire substrates through a metal-organic chemical-vapor deposition (MOCVD) system. Changes in mechanical properties for InGaN thin films are discussed in conjunction with deposition temperature, surface morphology and crystalline structure. The XRD measurements showed that there was no phase separation of In as the In composition went from 25 at.% to 34 at.%. Moreover, both XRD and AFM showed larger grain and surface roughness in In0.25Ga0.75N thin films. Nanoindentation results indicate that hardness and Young's modulus both decreased as the indentation depth increased. The contact stress–strain relationships were also analyzed. |
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| Keywords: | InGaN MOCVD XRD AFM Nanoindentation |
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