异质结扩散模型电流传输理论研究——Ⅱ.一维半导体结边界上边界条件的统一理论

已经给出的同质结或异质结边界条件缺少统一的理论基础,而且由于界面上的晶格结构已不存在严格的周期性,所以一些经典的结果对异质结已不再适用.本文首先对经典的载流于浓度的Boltzmann分布及电流密度方程进行了修正,然后从它们出发建立了一维半导体边界上边界条件的统一理论.最后把这个理论应用于突变异质p-n结,得出了它的边界条件和一些有关的重要结果.

A Research on Current Transportation Theory of Heterojunction Diffusion Model Ⅱ. United Theory of Boundary Conditions at One-Dimensional Semiconductor Boundaries

The presented homojunction and heterojunction boundary conditions are lack of an united theoretical base. Moreover, some classical results are no longer applicable to heterojunction, because of the absence of strict periodicity of crystal lattice at interface.In this paper, firstly, the classical carrier Boltzmann's distributions and current density equations have been modified, and then a group of boundary conditions, which are efficient for all one-dimensional semiconductor boundaries, have been established from the modified equations. Finally, the theory has been applied to abrupt p-n heterojunctions, thus resulting in their boundary conditions and associated importent results.