| 退火对LEC SI GaAs单晶性能的影响 |
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| 引用本文： | 过海洲,朱顺才,祝和,吴颖炜.退火对LEC SI GaAs单晶性能的影响[J].固体电子学研究与进展,1988(3). |
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| 作者姓名： | 过海洲 朱顺才 祝和 吴颖炜 |
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| 作者单位： | 南京电子器件研究所
(过海洲，朱顺才，祝和)，南京电子器件研究所(吴颖炜) |
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| 摘 要： | 本文报道了退火对非掺LEC SI GaAs晶片的电学性能和均匀性的影响。在850℃以上退火,晶片横截面上的平均迁移率由原生晶体的2.64×10~3cm~2/V·s提高到5.72×10`3cm~2/V·s,其中某些测量点达6.68×10~3cm~2/V·s,横向不均匀性由32％减少到6％,电阻率不均匀性由30％减少到10％。观察到晶片退火时间过长,性能反而下降。 基于上述实验结果,对退火改善晶体性能的机理进行了分析和讨论。
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Effect of Annealing on the Characteristics of LEC Semi Insulating GaAs |
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| Abstract: | The influence of annealing on the electrical property and uniformity of the LEC undoped semi-insulating GaAs wafers is reported. The average radial mobilities of wafers increase from 2.64×103cm2/V·s for the as-grown crystal to 5.72 ×103cm2/V·s for the annealed crystal at the temperature of above 850℃, some being as high as 6.68×103cm2/V·s. The radial nonuniformities of mobility and resistivity reduce from 32% and 30% to6% and 10%, respectively. It is observed that the electrical properties of wafers are degenerated when the annealing time is too long.
Based on these results, the mechanism of the improvd characteristics of the crystal by annealing is discussed. |
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