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Effects of the sulfurization temperature on sol gel-processed Cu2ZnSnS4 thin films
Authors:S. Kahraman  S. Çetinkaya  M. Podlogar  S. Bernik  H.A. Çetinkara  H.S. Güder
Affiliation:1. Semiconductor Research Laboratory, Physics Department, Faculty of Art and Science, Mustafa Kemal University, 31034 Hatay, Turkey;2. Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, Slovenia;3. Center of Excellence NAMASTE, Jamova cesta 39, 1000 Ljubljana, Slovenia
Abstract:As a promising and alternative solar absorber material, the copper–zinc–tin–sulfide compound (Cu2ZnSnS4) has been drawing attention in recent years for the production of cheap thin-film solar cells owing to the high natural abundance and non-toxicity of all the constituents, a tunable direct-band-gap energy and a large optical absorption coefficient. In addition, to overcome the problem of expensive vacuum-based methods, solution-based approaches are being developed for Cu2ZnSnS4 deposition. In this study, we have produced Cu2ZnSnS4 thin films via the sol–gel technique and subsequent sulfurization. The effects of the sulfurization temperature on the structural, morphological, compositional and optical properties of the films were investigated. X-ray diffraction and Raman spectroscopy analyses confirmed the formation of phase-pure CZTS films. The crystallinity of the films increased with an increasing sulfurization temperature. From the surface images and the results of the composition analysis, it was found that the films are uniform, composed of homogenously distributed grains and have compositions with Cu deficit. The values of the optical absorption coefficients for the films were found to be 104 cm?1 based on absorbance spectroscopy. The optical band-gap values were estimated to be between 1.32 and 2.27 eV depending on the sulfurization temperature.
Keywords:A. Films  A. Sol–gel process  B. Spectroscopy  B. X-ray methods
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