|
|||||
|
|
Effect of PbTiO3 seed layer on the orientation behavior and electrical properties of Bi(Mg1/2Ti1/2)O3–PbTiO3 ferroelectric thin films |
|
| Authors: | Longdong Liu Ruzhong Zuo Qi Liang |
| Affiliation: | 1. Institute of Electro Ceramics and Devices, School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, PR China;2. Center for Nanomaterial and Nanodevice, School of Physical Science, Hefei University of Technology, Hefei 230009, PR China |
| Abstract: | High Curie-temperature 0.63Bi(Mg1/2Ti1/2)O3–0.37PbTiO3 (BMT–PT) films were fabricated on Pt(111)/Ti/SiO2/Si substrates by the sol–gel spin-coating method. The oriented growth behavior of thin films was controlled by introducing a PT seed layer onto the platinum electrode surface. The effect of the annealing method of the PT seed layer on the orientation behavior and electrical properties of BMT–PT films was investigated. It was found that BMT–PT thin film exhibits higher (100) orientation degree when the PT seed layer was treated by rapid thermal annealing. The dielectric permittivity increases while the remanent polarization and coercive field decrease with increasing the (100) orientation degree. These results were explained according to the relationship between the preferential orientation and the spontaneous polarization directions of the films. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |