Effect of vanadium doping on ferroelectric and electrical properties of Bi3.25La0.75Ti3O12 thin film |
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| Authors: | Jin Soo Kim Hai Joon Lee Ill Won Kim Byung Moon Jin |
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| Affiliation: | (1) Research Center for Dielectric and Advanced Matter Physics, Pusan National University, Busan, 609-735, Korea;(2) Department of Physics, University of Ulsan, Ulsan, 680-749, Korea;(3) Department of Physics, Dongeui University, Busan, 614-714, Korea |
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| Abstract: | Bi3.25La0.75Ti3O12 (BLT) and V-doped BLT (BLTV) thin films were prepared on Pt/Ti/SiO2/Si substrates by a pulsed laser deposition method. The effects of V doping on ferroelectric and electrical properties were
investigated by polarization-electric field hysteresis loops and leakage current-voltage measurements. BLTV single phases
were confirmed by X-ray diffraction. Remnant polarization was increased and the leakage current density was decreased by V
doping. The leakage current density of BLT thin films suddenly increased at 100 kV/cm while that of BLTV thin films increased
at the higher electric field of 160 kV/cm. The power law relationship J α En of current density vs. applied electric field is estimated to be J αE2.0 for BLT and J αE1.0 for BLTV thin films. The leakage current of the BLT/Pt junction can be explained by space-charge-limited current. However,
that of the BLTV/Pt junction was characterized by the Schottky emission behavior. |
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| Keywords: | Ferroelectric thin film Leakage current Vanadium doped BLT FRAM |
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