Analog and radio-frequency performance analysis of silicon-nanotube MOSFETs |
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| Authors: | Pramod Kumar Tiwari Mukesh Kumar Ramavathu Sakru Naik Gopi Krishna Saramekala |
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| Affiliation: | Department of Electronics and Communication Engineering, National Institute of Technology, Rourkela-769008, Odisha, India |
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| Abstract: | This work presents a comparative study of the influence of various parameters on the analog and RF properties of silicon-nanotube MOSFETs and nanowire-based gate-all-around (GAA) MOSFETs. The important analog and RF performance parameters of SiNT FETs and GAA MOSFETs, namely drain current (Id), transconductance to drain current ratio (gm/Id), Ion/Ioff, the cut-off frequency (fT) and the maximum frequency of oscillation (fMAX) are evaluated with the help of Y- and H-parameters which are obtained from a 3-D device simulator, ATLASTM. It is found that the silicon-nanotube MOSFETs have far more superior analog and RF characteristics (gm/Id, fT and fMAX) compared to the nanowire-based gate-all-around GAA MOSFETs. The silicon-nanotube MOSFET shows an improvement of~2.5 and 3 times in the case of fT and fMAX values respectively compared with the nanowire-based gate-all-around (GAA) MOSFET. |
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| Keywords: | analog and RF SiNT MOSFETs GAA MOSFETs unity gain frequency unity power frequency |
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