Influence of Ga2O3 addition on transparent conductive oxide films of In2O3-ZnO |
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Authors: | Kikuo Tominaga Daisuke Takada Kouji Shimomura Hiroshi Suketa Keisuke Takita Keiichirou Murai Toshihito Moriga |
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Affiliation: | Faculty of Engineering, The University of Tokushima, Minami-josanjima 2-1, Tokushima 770-8506, Japan |
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Abstract: | Influence of incorporation of Ga in amorphous In-Zn-O transparent conductive oxide films was investigated as a function of Zn/(Zn + In). For In-Zn-O films with no Ga2O3, the range of Zn/(Zn + In) ratio where the amorphous phase appears became narrow at a substrate temperature of 250 °C. With increasing Ga2O3 quantity, amorphous films were obtained even at a high substrate temperature of 250 °C in a wider range of Zn/(Zn + In) than that of In-Zn-O films with no Ga2O3. This means that the trend of crystallization at higher substrate temperature was disturbed with additional Ga incorporation. For the film deposited from ZnO:Ga (Ga2O3: 4.5-7.5 wt%) and In2O3 targets, we obtained a resistivity of 2.8 × 10−4 Ω cm, nearly the same value as that for an In-Zn-O film with no Ga2O3. The addition of more than 7.5 wt% Ga2O3 induced a widening of the optical band gap. |
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Keywords: | TCO In2O3 ZnO Amorphous Transparent IZO |
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