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In2O3-ZnO transparent conductive oxide film deposition on polycarbonate substrates |
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| Authors: | Toshihiro Moriga Koji Shimomura Hiroshi Suketa Kei-ichiro Murai Kikuo Tominaga |
| Affiliation: | a Department of Advanced Materials, Institute of Technology and Science, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan b Department of Chemical Science and Technology, Graduate School of Advanced Technology and Science, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan c Department of Electric and Electronic Engineering, Graduate School of Advanced Technology and Science, The University of Tokushima, 2-1 Minami-Josanjima, Tokushima 770-8506, Japan |
| Abstract: | Amorphous transparent conductive oxide films in the In-Zn-O system were deposited on polycarbonate (PC) substrates by simultaneous DC sputtering of an In2O3 target and a ZnO target with either 4 wt% Al2O3 or 7.5 wt% Ga2O3 impurities. Although the resistivity of the amorphous, non-doped In-Zn-O film on PC was about one order of magnitude higher than that on the glass substrate, the resistivity of the In-Zn-O films with Ga2O3 impurities on PC substrates was reduced to the level of the non-doped In-Zn-O films on glass substrates. The addition of Al2O3 or Ga2O3 to the In-Zn-O films also induced the widening of the optical band gap, which would improve transparency at blue wavelengths. |
| Keywords: | TCO PC substrate Ga2O3 addition Al2O3 addition Amorphous |
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