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X- and Ku-band internally matched packaged GaAs f.e.t.
Authors:Derewonko  H Laviron  M Lepage  J
Affiliation:Thomson-CSF, Département Microélectronique Hyperfréquence, Orsay, France;
Abstract:The design and performances of medium-power X- and Ku-band internally matched GaAs f.e.t.s are reported. With input-output v.s.w.r. lower than 2 : 1 over more than 20% bandwidth in the X-band and l0% in the Ku-band, 50 and 200 mW two-stage cascaded amplifiers have been realised with no matching circuit outside the packaged f.e.t. and with only one power supply.
Keywords:
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