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Fermi surface topology of deuterium-doped vanadium: Compton scattering study |
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| Authors: | S. Mizusaki N. SatoY. Ito M. ItouI. Yamamoto Y. NagataY. Sakurai M. Yamaguchi |
| Affiliation: | a Department of Electrical Engineering and electronics, Aoyama Gakuin University, Fuchinobe, Chuou-ku, Sagamihara, Kanagawa 252-5258, Japan b Department of Physics, Yokohama National University, Tokiwadai, Hodogaya-ku, Yokohama 240-8501,Japan c Material Science Division, Japan Synchrotron Radiation Research Institute, SPring-8,1-1-1 Kouto, Mikazuki, Sayo, Hyogo 678-5198, Japan |
| Abstract: | The deuteration-induced effect on the Fermi surface (FS) topology of V was investigated by the synchrotron-based Compton scattering technique with 115 keV X-rays. The three-dimensional occupation number density (OND) of α-VD0.64 single crystal and V single crystal was reconstructed by the directional Compton profiles along 13-18 directions. The observed OND shows that the FS topology of α-VD0.64.differs from that of V at Γ, N, and H points in the crystal momentum space, which are hole position for V. This indicates that electrons that originate from deuterium modify the upper part of the host metal d bands (3rd and 4th bands) at the Fermi level EF, and forms the metal-hydrogen bonding states with the lower part of the host metal d band (1st band). |
| Keywords: | 71.18.+y 71.20.&minus b 71.23.&minus k 78.70.Ck 31.15.A |
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