Relationships between Zr substitution for Ti and microwave dielectric properties in Mg(ZrxTi1−x)O3 ceramics |
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Authors: | Ching-Fang Tseng |
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Affiliation: | Department of Electronic Engineering, National United University, No. 1 Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan |
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Abstract: | The influence of Zr substitution for Ti on the microwave dielectric properties and microstructures of the Mg(ZrxTi1−x)O3(MZxT) (0.01 ≤ x ≤ 0.3) ceramics was investigated. The quality factors of Mg(ZrxTi1−x)O3 ceramics with x = 0.01-0.05 were improved because the solid solution of a small amount of Zr4+ substitution in the B-site could increase density and grain size. An excess of Zr4+ resulted in the formation of a great deal of secondary phase that declined the microwave dielectric properties of MZxT ceramics. The temperature coefficient of resonant frequency (τf) of Mg(ZrxTi1−x)O3 ceramics slightly increased with increasing Zr content, and the variation in τf was attributed to the formation of secondary phases. |
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Keywords: | Mg(ZrxTi1&minus x)O3 ceramics Microwave dielectric properties |
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