Low-temperature fabrication of p+-n diodes with300-Å junction depth

Gas immersion laser doping (GILD) was used to fabricate p⁺ -n diodes with 300-Å junction depth. These diodes exhibit ideality factors of 1.01-1.05 over seven decades of current, reverse leakage current densities ⩽10 nA/cm² at -5-V reverse bias, breakdown voltages above 100 V, and electrical activation of the boron impurity to concentrations approaching 1×10²¹ atoms/cm³. This behavior is achieved without the use of a furnace or rapid thermal anneal