GaAs/Ge solar cell AC parameters at different temperatures |
| |
Authors: | R Anil Kumar M S Suresh J Nagaraju |
| |
Affiliation: | a ISRO Satellite centre, ISRO, Bangalore 560 017, India;b Department of Instrumentation, Indian Institute of Science, Bangalore 560 012, India |
| |
Abstract: | The AC parameters of Gallium Arsenide (GaAs/Ge) solar cell were measured at different cell temperatures (198–348 K) by varying the cell bias voltage (forward and reverse) under dark condition using impedance spectroscopy technique. It was found that the cell capacitance increases with the cell temperature where as the cell resistance decreases, at any bias voltage. The measured cell parameters were used to calculate the intrinsic concentration of electron–hole pair, cell material relative permittivity and its band gap energy. The diode factor and the cell dynamic resistance at the corresponding maximum power point decrease with the cell temperature. |
| |
Keywords: | GaAs/Ge solar cell AC parameters Temperature |
本文献已被 ScienceDirect 等数据库收录! |