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Read/write mechanisms and data storage system using atomic force microscopy and MEMS technology
Authors:Shi Hyunjung  Hong Seungbum  Moon Jooho  Jeon Jong Up
Affiliation:Stage Laboratory, Samsung Advanced Institute of Technology, Suwon, South Korea. hjshin@sait.samsung.co.kr
Abstract:Information storage system that has a potentially ultrahigh storage density based on the principles of atomic force microscopy (AFM) has been developed. Micro-electro-mechanical systems (MEMS) technology plays a major role in integration and miniaturization of the standard AFM. Its potential application for ultrahigh storage density has been demonstrated by AFM with a piezoresponse mode to write and read information bits in ferroelectric Pb(Zr(x)Ti(1 - x))O3 films. With this technique, bits as small as 40 nm in diameter have been achieved, resulting in a data storage density of simply more than 200 Gb/in2. Retention loss phenomenon has also been observed and investigated by AFM in the piezoresponse mode. Finally, local piezoelectric measurements of PZT films by different processing technologies are discussed in detail.
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