GaAs/AlGaAs power heterobipolar transistor fabricated on silicon substrate |
| |
| Authors: | Ueda D Lee WS Ma T Costa D Harris JS |
| |
| Affiliation: | Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan; |
| |
| Abstract: | A GaAs/AlGaAs power HBT was fabricated on a silicon substrate, where the thermal conductance is reduced by a factor of 2.8 compared with that on bulk GaAs. Due to the newly developed monolithically grown ballast resistor in the emitter region, the experimentally fabricated device has shown the highest collector current of over 2.5 A for a device with an active device area of 0.14 mm/sup 2/.<> |
| |
| Keywords: | |
|
|
