| 高压超快GaAs光电导开关的研制 |
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| 引用本文： | 梁振宪,施卫. 高压超快GaAs光电导开关的研制[J]. 电子学报, 1998, 26(11): 104-106 |
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| 作者姓名： | 梁振宪 施卫 |
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| 作者单位： | 1. 西安交通大学电气工程学院,西安,710049
2. 西安理工大学应用物理系,西安,710048 |
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| 基金项目： | 国家自然科学基金!No.59407006 |
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| 摘 要： | 本文首次报导了采用全固态绝缘，微带线低电感输出的Ｓｉ－ＧａＡｓ高压超快光电导开关的研制结果，该器件的耐压强庶３５ｋＶ／ｃｍ，典型的电流脉冲上升时间为２００ｐｓ，电流达１００Ａ。并在实验中观测到典型的高倍增现象。
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| 关 键 词： | 光电导开关 Lock-on效应 脉冲功率技术 |
Fabrication of High-Voltage Ultra-Fast Photoconductive Switches |
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| Abstract: | The high-voltage ultra-fast photoconductive semiconductor switches(PCAS's) fabricated with Si-GaAs coated by all-solid insulation protection technique are reported in this paper. The largesthold-off strength of 35 kV/cm of fabricated switches is obtained. We have used PCSS's to switch voltage as high as 30 kV/cm and current about 100 A and preduced rise time as fast as 200 ps in the initiation of lock-on. Using all-solid technique to fabrication of high-voltage GaAs switch makes the device structure more simple and more practical. |
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| Keywords: | Photoconductive switches Lock-on effect Pulsed power technique |
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