| Abstract: | In this paper, a new structure for an advanced high holding voltage silicon controlled rectifier (AHHVSCR) is proposed. The proposed new structure specifically for an AHHVSCR‐based electrostatic discharge (ESD) protection circuit can protect integrated circuits from ESD stress. The new structure involves the insertion of a PMOS into an AHHVSCR so as to prevent a state of latch‐up from occurring due to a low holding voltage. We use a TACD simulation to conduct a comparative analysis of three types of circuit — (i) an AHHVSCR‐based ESD protection circuit having the proposed new structure (that is, a PMOS inserted into the AHHVSCR), (ii) a standard AHHVSCR‐based ESD protection circuit, and (iii) a standard HHVSCR‐based ESD protection circuit. A circuit having the proposed new structure is fabricated using 0.18 μm Bipolar‐CMOS–DMOS technology. The fabricated circuit is also evaluated using Transmission‐Line Pulse measurements to confirm its electrical characteristics, and human‐body model and machine model tests are used to confirm its robustness. The fabricated circuit has a holding voltage of 18.78 V and a second breakdown current of more than 8 A. |
