| 射频磁控溅射法制备(100)择优取向Ba0.7Sr0.3TiO3薄膜 |
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| 引用本文： | 谢波玮,李弢,古宏伟.射频磁控溅射法制备(100)择优取向Ba0.7Sr0.3TiO3薄膜[J].稀有金属,2006,30(3):407-410. |
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| 作者姓名： | 谢波玮 李弢 古宏伟 |
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| 作者单位： | 北京有色金属研究总院超导材料研究中心,北京,100088 |
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| 摘 要： | 用射频磁控溅射法在快速热处理过的Pt／Ti/SiO2/Si（100）基体上制备了Ba0.7sr0.3TiO3薄膜。通过引入溅射因子α，在相同工艺条件（高温大功率溅射）下，对靶材成分进行调整，使薄膜成分无化学计量比偏离。薄膜成相较未调整前有显著改善，低角区的衍射杂峰消失。{100}方向有择优生长，同体材料及sol-gel法制备的BST薄膜有明显不同，研究认为是成分调整后，薄膜成分无偏离所致。
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| 关 键 词： | 射频磁控溅射 铁电薄膜 |
| 文章编号： | 0258-7076（2006）03-0407-04 |
| 收稿时间： | 2005-02-17 |
| 修稿时间： | 2005-02-172005-05-10 |
Preparation of (100) Preferred Orientation Ba0.7Sr0.3TiO3 Thin Films by RF-Magnetron Sputtering |
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| Xie Bowei,Li Tao,Gu Hongwei.Preparation of (100) Preferred Orientation Ba0.7Sr0.3TiO3 Thin Films by RF-Magnetron Sputtering[J].Chinese Journal of Rare Metals,2006,30(3):407-410. |
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| Authors: | Xie Bowei Li Tao Gu Hongwei |
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| Affiliation: | Superconducting Materials Research Center, General Research Institute for Non-Ferrous Metals, Beijing 100088, China |
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| Abstract: | BST thin films were prepared on Pt/Ti/SiO_2/Si(100) substrates by RF magnetron sputtering.Thin film fabricated from Ba_(0.7)Sr_(0.3)TiO_3 target has component deviations.XRD peaks in low angle region indicate the existence of Ba,Sr or Ti oxides.By introducing sputtering factors,the BST thin films from Ba_(1.00)Sr_(0.48)TiO_(3.18) target were prepared.The obtained thin film has Ba/Sr/Ti ratio of 0.7/0.3/1.XRD pattern shows higher peaks in {100} orientations and no disordered peaks in low angle region.The preferred {100} orientation is distinguished from the results of BST ceramics and BST thin films made by sol-gel methods reported. |
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| Keywords: | BST |
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