首页 | 本学科首页   官方微博 | 高级检索  
     

一种新的阶跃恢复二极管建模方法及其在短脉冲产生电路中的应用
引用本文:周建明,高晓薇,费元春.一种新的阶跃恢复二极管建模方法及其在短脉冲产生电路中的应用[J].吉林大学学报(工学版),2007,37(1):173-176.
作者姓名:周建明  高晓薇  费元春
作者单位:北京理工大学,信息科学技术学院,电子工程系,北京,100081;华北电力大学,北京,102206
摘    要:详细分析了阶跃恢复二极管(SRD)阶跃电压的产生过程和机理,提出了一种新的基于一个非线性电容和PN二极管并联的SRD模型。利用此模型对窄脉冲产生电路进行了仿真,分析了影响窄脉冲特性的主要因素,并从硬件上实现了窄脉冲仿真电路。经试验测试,脉冲宽度为230 ps、幅度为3.3 V时与仿真结果较吻合,验证了该模型的正确性。

关 键 词:半导体技术  窄脉冲  阶跃恢复二极管  建模
文章编号:1671-5497(2007)01-0173-04
收稿时间:2006-04-18
修稿时间:2006年4月18日

New modeling of SRD and its application in short pulse generation circuit
Zhou Jian-ming,Gao Xiao-wei,Fei Yuan-chun.New modeling of SRD and its application in short pulse generation circuit[J].Journal of Jilin University:Eng and Technol Ed,2007,37(1):173-176.
Authors:Zhou Jian-ming  Gao Xiao-wei  Fei Yuan-chun
Affiliation:1. Department of Electronic Engineering, School of Information Science and Technology, Beijing Institute of Technology, Beijing 100081 ,China; 2. North China Electric Power University, Beijing 102206, China
Abstract:The step voltage generation process and mechanism in the step recovery diode(SRD) were analyzed and a new SRD model was proposed based on the parallel connection of a nonlinear capacitance and a PN diode.A short pulse generation circuit was simulated by the proposed model,the major parameters affecting the short pulse characteristics were studied,and the hardware of the circuit was realized.The measured pulse width was 230 ps and the measured pulse voltage was 3.3 V,both were in good agreement with the simulated results,thus verified the proposed model.
Keywords:semiconductor  short pulse  step recovery diode(SRD)  modeling
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《吉林大学学报(工学版)》浏览原始摘要信息
点击此处可从《吉林大学学报(工学版)》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号