| 摘 要： | The design considerations and experimental results of compact low noise GaAs MESFETAmplifiers for UHF operation are described in this paper.The miniaturized and optimized circuitsare obtained by means of special matching network and GAD technique.Both a two-stage unit at 700MHz and a three-stage unit at 1000 MHz are fabricated on a 50×60 mm~2 alumina substrate,andpower gain of 29 dB and 30 dB,,noise figure of 0.8 and 1.2 dB and bandwidth of 40 MHz(3dB)and100 MHz (1dB) are obtained respectively.The satellite direct broadcasting TV receiver fabricatedwith a 700 MHz GaAs MESFET amplifier has clear pictures and good sound.
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