二维任意形状寄生电阻电容的边界元计算

由于集成电路技术高速发展,精确提取任意形状寄生电阻电容变得十分重要,本文以直接边界元素法为基础,利用圆弧样条插值近似任意曲线边界,使插值曲线具有整体一阶连续性,并克服了大挠度与多值的困扰。在直线边界使用线性连续元,在曲线边界使用二次连续无。对两邻国为直线的角点,我们曾提出处理角点处存在多重法的导数的一种方法。这里,它被推广到角点邻边含曲线段的情形。数值结果表明模拟器是可行的。

THE CALCULATION OF TWO-DIMENSIONAL PARASITIC RESISTANCE AND CAPACITANCE WITH REALISTIC SHAPES BY USING THE BOUNDARY ELEMENT METHOD

Because the progress of VLSI technology is very fast,it is very important to accurately extract the parasitic resistance and capacitance with any realistic shapes. In this paper,a simulator using the Boundary Element Method(BEM) is pre'sented. It employs the arc spline to approximate any curves for keeping the global continuity of thefirst order and eliminating puzzle of large deflection and multivalues. A methgd"' ofmultiple normal derivative treating the corners formed by two segments of straight lineis expanded to these corners which contain one or two curve segments. The numerical results show that the simulator is feasible.