Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide: Effect of aluminum doping |
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| Authors: | R Groenen E R Kieft J L Linden M C M Van de Sanden |
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| Affiliation: | (1) Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands;(2) TNO TPD, Division Models and Processes, P.O. Box 595, 5600 AN Eindhoven, The Netherlands |
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| Abstract: | Aluminum-doped zinc oxide films exhibiting a rough surface morphology are deposited on glass substrates utilizing expanding
thermal plasma. Spectroscopic ellipsometry is used to evaluate optical and electronic film properties. The presence of aluminum
donors in doped films is confirmed by a shift in the zinc oxide bandgap energy from 3.32 to 3.65 eV. In combination with transmission
reflection measurements in the visible and NIR ranges, charge carrier densities, optical mobilities, and film resistivities
have been obtained from the free carrier absorption. Film resistivities are consistent with direct measurements, values as
low as 6.0×10−4 ω cm have been obtained. The interdependence of electrical conductivity, film composition, and film morphology is addressed. |
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| Keywords: | Spectroscopic ellipsometry plasma-enhanced chemical vapor deposition transparent conducting oxide zinc oxide |
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