Evidence of electron trapping in undoped hydrogenated amorphous silicon (a-Si:H) Schottky barriers by the surface photovoltage (SPV) technique — A study of stability in a-Si:H solar cells

Surface photovoltage (SPV) measurements on a-Si:H/metal Schottky devices under forward bias are presented. The space-charge density decreases with applied forward bias while both the space-charge width and the apparent diffusion length are essentially constant. These are all attributed to electron trapping in Schottky barrier region. Furthermore, we explore electron trapping effect in a-Si:H on light-induced degradation of a-Si:H solar cells.