High-radiance light-emitting diodes |
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| Authors: | Ettenberg M. Hudson K. Lockwood H. |
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| Affiliation: | RCA Laboratories, Princeton, NJ, USA; |
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| Abstract: | The properties of AlxGa1-xAs heterojunction incoherent edge emitters are described. Single (SH) and double-heterojunction (DH) diodes emitting at about 8200 Å were studied. The highest CW radiance measured perpendicular to the emitting facet was 95 W/cm2.sr at 4200 A/cm2for a stripe-geometry SH device. This high radiance level was found to be consistent with an operating life of many thousands of hours. The near- and far-field patterns of the diodes are presented as well as the spectral characteristics and the radiance as a function of drive current, both pulsed and dc. |
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