Phase relationships and crystallography in the pseudobinary system Gd5Si4---Gd5Ge4

A study of phase relationships and crystallography in the pseudobinary system Gd₅(Si_xGe_1−x)₄ revealed: (1) that both terminal binary compounds Gd₅Si₄ and Gd₅Ge₄ crystallize in the Sm₅Ge₄-type orthorhombic structure, and (2) the appearance of an intermediate (ternary) phase with a monoclinic crystal structure which is similar to both Gd₅Si₄ and Gd₅Ge₄. The formation of the monoclinic phase at 0.24≤x≤0.5 between Gd₅(Si_0.96Ge_3.03)Gd₅(Si₁Ge₃) and Gd₅(Si₂Ge₂)] is probably due to the large difference in bonding characteristics of Si and Ge in the Gd₅Si₄-Gd₅Ge₄ pseudobinary system which limits the ability of the mutual substitution of Si for Ge and vice versa without a change of the crystal structure. For the composition Gd₅(Si₂Ge₂) the lattice parameters of the monoclinic structure (space group P112₁/a) are a=7.580865), b=14.802(1), c=7.7799(5)Å, γ=93.190(4)°. A distinct difference in the magnetic behaviors of the alloys from three different phase regions in this system follows the distinct difference in the crystal structures observed for the alloys from the three phase regions.