| RC-IGBT的snap-back现象及其仿真 |
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| 引用本文： | 张文亮,田晓丽,谈景飞,朱阳军. RC-IGBT的snap-back现象及其仿真[J]. 半导体学报, 2013, 34(7): 074007-5 |
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| 作者姓名： | 张文亮 田晓丽 谈景飞 朱阳军 |
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| 作者单位： | Institute of Microelectronics,Chinese Academy of Sciences;Jiangsu R&D Center for Internet of Things |
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| 基金项目： | 国家重大科技专项(NO. 2011ZX02504-002) |
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| 摘 要： | The RC-IGBT(reverse conducting insulated gate bipolar transistor) is a new kind of power semiconductor device which has many advantages such as smaller chip size,higher power density,lower manufacturing cost,softer turn off behavior,and better reliability.However,its performance has a number of drawbacks,such as the snap-back effect.In this paper,an introduction about the snap-back effect of the RC-IGBT is given firstly. Then the physical explanations are presented with two simplified models.After that,some numerical simulations are carried out to verify the correctness of the models.
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| 关 键 词： | RC-IGBT primary snap-back effect secondary snap-back effect |
The snap-back effect of an RC-IGBT and its simulations |
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| Zhang Wenliang,Tian Xiaoli,Tan Jingfei and Zhu Yangjun. The snap-back effect of an RC-IGBT and its simulations[J]. Chinese Journal of Semiconductors, 2013, 34(7): 074007-5 |
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| Authors: | Zhang Wenliang Tian Xiaoli Tan Jingfei Zhu Yangjun |
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| Affiliation: | Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Jiangsu R&D Center for Internet of Things, Wuxi 214135, China;Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;Jiangsu R&D Center for Internet of Things, Wuxi 214135, China |
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| Abstract: | The RC-IGBT (reverse conducting insulated gate bipolar transistor) is a new kind of power semiconductor device which has many advantages such as smaller chip size, higher power density, lower manufacturing cost, softer turn off behavior, and better reliability. However, its performance has a number of drawbacks, such as the snap-back effect. In this paper, an introduction about the snap-back effect of the RC-IGBT is given firstly. Then the physical explanations are presented with two simplified models. After that, some numerical simulations are carried out to verify the correctness of the models. |
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| Keywords: | RC-IGBT primary snap-back effect secondary snap-back effect |
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