Structural and electrical properties of V-doped ZnO prepared by the solid state reaction

This paper reports the synthesis, crystal structure and electrical conductivity properties of vanadium (V)-doped zinc oxide (ZnO) powders (i.e. Zn_1?2X V _X O binary system, x = 0, 0.0025, 0.005, 0.0075 and in the range 0.01 ≤ x ≤ 0.15). I-phase samples, which were indexed as single phase with a hexagonal (wurtzite) structure in the V-doped ZnO binary system, were determined by X-ray diffraction (XRD). The limit solubility of V in the ZnO lattice at this temperature is 3 mol % at 950 °C. The impurity phase at 950 °C was determined as ZnV₂O₆ when compared with standart XRD data. The research focused on single I-phase ZnO samples which were synthesized at 950 °C because of the limit of the solubility range is widest at this temperature. It was observed that the lattice parameters a and c decreased with V doping concentration. The electrical conductivity of the pure ZnO and single I-phase samples were studied using the four-point probe dc method at temperatures between 100 and 950 °C in an air atmosphere. The electrical conductivity values of pure ZnO and 3 mol % V-doped ZnO samples at 100 °C were 2.75 × 10^?6 and 7.94 × 10^?5 Ω^?1 cm^?1, and at 950 °C they were 3.4 and 54.95 Ω^?1 cm^?1, respectively. In other words, the electrical conductivity increased with V doping concentration.