SnO2基导电陶瓷靶材的制备及应用性能表征

为了获得高质量的SnO2薄膜,我们需要制备高密度、高导电的优质SnO2靶材。这里以分析纯的SnO2、Sb2O5粉体为制备原料,采用冷等静压加上常压烧结方法制备高导电性Sb∶SnO2(ATO)陶瓷靶材。用X射线衍射(XRD)和扫描电子显微镜(SEM)分析靶材的化学成分和微观形貌并系统研究了不同的成型压力对靶材电学特性和致密度的影响。结果表明:成型压力的大小对于ATO靶材本身的致密度及电学特性都有很大的影响。成型压力为15MPa时,ATO靶材的电阻率最小,为0.38Ω.cm;SnO2靶材的收缩率达10.71%,靶材的致密度为95%;靶材可在射频磁控溅射仪下正常工作,并成功在玻璃基片上沉积性能良好的高红外反射透明导电SnO2薄膜。此制备过程操作方便,工艺简单,降低了靶材的成本,从而能够大大扩大透明导电薄膜的应用领域。

STUDY ON PREPARATION AND APPLICATION PERFORMANCE OF SNO2 CONDUCTIVE CERAMIC TARGET

To obtain high quality SnO2 film,high conductivity and high quality SnO2 target should be obtained.High-conductivity Sb: SnO2(ATO) ceramic targets were fabricated by normal pressure sintering method using SnO2,Sb2O5 powder as raw material.By using X-ray diffraction(XRD),and SEM,the chemical composition and morphology of SnO2 target were analyzed.The effect of different forming pressure on the morphology and electrical properties of the target were studied in our paper.The results showed that the molding pressure had a significant impact on ATO target density and performance of the final sintering.When molding pressure is 15MPa,the target has the minimum resistivity for 0.38Ω·cm.The shrinkage rate of conductive SnO2 target is 10.71% and the target can be used to sputtering in the magnetron sputter.The transparent conductive SnO2 thin film is successfully deposited on the glass substrate with good performance of high infrared reflection.The preparation process is simple and the cost of SnO2 target is low.