电子束蒸发制备CdS多晶薄膜及性质研究

采用电子束蒸发工艺在普通玻璃衬底上制备了硫化镉(CdS)多晶薄膜,研究了不同衬底温度对薄膜结构、表面形貌及光透过率的影响.测试结果显示:(1)不同衬底温度下沉积的CdS薄膜均呈现了〈002〉晶向的高度优势生长,属于六方相结构.随着衬底温度的升高,还逐渐出现了〈103〉、〈004〉、〈105〉等六方晶向;(2)CdS多晶薄膜表面连续,致密性好,且晶粒大小随着衬底温度的升高而增大;(3)低温下制备CdS薄膜吸收谱有较宽的吸收边,随着衬底温度的升高,吸收曲线趋于陡直.制备样品在550nm波段后的平均透过率都超过70%,符合作为CdTe太阳电池的窗口层.

Growth and Characterization of CdS Polycrystalline Films by Electron Beam Evaporation

The CdS thin films were grown by electron beam evaporation on glass substrates elevated at different temperatures.The impacts of the film growth conditions on its properties were studied.The microstructures and properties of the CdS film were characterized with X-ray diffraction(XRD),scanning electron microscopy(SEM)and conventional optical probes.The results show that the substrate temperature significantly affects the films growth and its properties.For instance,as substrate temperature rises up,the hexagonal grains with 〈002〉preferential orientation get bigger;the〈103〉,〈004〉and〈105〉orientations in the increasingly compact films gradually show up;and the wide absorption edge of the polycrystalline CdS films become steeper.The averaged transmittance of visible light after 550nm in CdS films was found to be 70%,good enough for the window material of CdTe solar cells.