| 薄栅氮化物的击穿特性 |
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| 引用本文： | 张国强,陆妩,艾尔肯,余学锋,任迪远,严荣良.薄栅氮化物的击穿特性[J].固体电子学研究与进展,2002,22(3):321-322,338. |
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| 作者姓名： | 张国强 陆妩 艾尔肯 余学锋 任迪远 严荣良 |
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| 作者单位： | 中国科学院新疆物理研究所,乌鲁木齐,830011 |
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| 摘 要： | 研究了含 N MOS薄栅介质膜的击穿电场和电荷击穿特性。结果表明 :MOS栅介质中引入一定的 N后 ,能提高介质的电荷击穿强度 ,电荷击穿强度受 N2 O退火温度的制约 ;N对薄栅介质的击穿电场强度影响甚微 ,击穿电场受栅偏压极性的制约。用一定模型解释了实验结果
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| 关 键 词： | 氮化物 金属-氧化物-硅结构 击穿 |
| 文章编号： | 1000-3819(2002)03-321-02 |
Breakdown Characteristics in Thin Nitrided Oxides |
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| ZHANG Guoqiang,LU Wu,Aierken,YU Xuefeng,REN Diyuan,YAN Rongliang.Breakdown Characteristics in Thin Nitrided Oxides[J].Research & Progress of Solid State Electronics,2002,22(3):321-322,338. |
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| Authors: | ZHANG Guoqiang LU Wu Aierken YU Xuefeng REN Diyuan YAN Rongliang |
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| Abstract: | Breakdown field and charge breakdown characteristics in thin nitrided MOS dielectrics have been investigated. The experimental data have shown that charge breakdown strength increased by introducing nitride into gate oxides and by raising N 2O annealing temperature. Breakdown field in thin nitrided films is only improved little and depends on the bias polarity. |
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| Keywords: | nitride MOS structure breakdown |
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