Reliable far-infrared photoconductivity method to identify a variety of residual donors in epitaxial GaAs

The chemical identity of unintentional contaminants in ultra-high purity eipitaxial GaAs and related semiconductor crystals can be distinguished by submillimeter wave magneto-spectroscopy at low temperature. An improved method of identifying hydrogen-like donors such as sulfur, silicon, selenium and germanium has been developed for the purpose of correcting some mistaken identifications that have been published during the past ten years. The new method requires the development of an experimental “signature curve” for each contaminant by measuring the energy of its 1s to 2p (m=?1) transition at several values of magnetic field intensity. The energy of this transition at a given magnetic field intensity is different depending upon the nucleus to which the electron is bound in the 1s state. The validity of the improved method was tested by means of transmutation doping.