| ULSI硅衬底的化学机械抛光技术 |
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| 引用本文： | 狄卫国,刘玉岭,司田华. ULSI硅衬底的化学机械抛光技术[J]. 半导体技术, 2002, 27(7): 18-22. DOI: 10.3969/j.issn.1003-353X.2002.07.007 |
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| 作者姓名： | 狄卫国 刘玉岭 司田华 |
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| 作者单位： | 1. 河北工业大学,天津,300130;2. 洛阳单晶硅厂,河南,洛阳,471009 |
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| 摘 要： | 介绍了特大规模集成电路(ULSI)硅衬底的化学机械抛光工艺.对抛光机理、影响抛光速率和抛光质量的因素、抛光液中的成份特别是精抛液中的有机碱和活性剂的选择作了讨论分析,另外对抛光中出现的一些问题及解决方法进行了分析研究.
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| 关 键 词： | 化学机械抛光 抛光液 ULSI 硅片 |
| 文章编号： | 1003-353X(2002)07-0018-05 |
Chemomechanical polishing technique of silicon substrate in ULSI |
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| DI Wei-guo,LIU Yu-ling,SI Tian-hua. Chemomechanical polishing technique of silicon substrate in ULSI[J]. Semiconductor Technology, 2002, 27(7): 18-22. DOI: 10.3969/j.issn.1003-353X.2002.07.007 |
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| Authors: | DI Wei-guo LIU Yu-ling SI Tian-hua |
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| Affiliation: | DI Wei-guo1,LIU Yu-ling1,SI Tian-hua2 |
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| Abstract: | Chemomechanical polishing(CMP)technology of silicon substrate inULSI is introduced in this paper. The mechanism of silicon polishing, some factors thatinfluence polishing rate and quality, choice of components in the slurry, specially organicalkali and surfactant in final polishing slurry are discussed. Besides some problems existedin polishing and the ways to solve the problems are analyzed. |
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| Keywords: | CMP ULSI Slurry Silicon wafer |
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