| 光电导开关面临的问题及发展趋势 |
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| 引用本文： | 李寅鑫,苏伟. 光电导开关面临的问题及发展趋势[J]. 太赫兹科学与电子信息学报, 2009, 7(1): 56-60 |
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| 作者姓名： | 李寅鑫 苏伟 |
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| 作者单位： | 中国工程物理研究院,电子工程研究所,四川,绵阳,621900 |
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| 基金项目： | 中国工程物理研究院科学技术基金 |
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| 摘 要： | 光电导开关具有传统高功率脉冲器件不具备的优良性能，在产生高功率脉冲领域有很大发展潜力。使用光导开关能直接从直流电源产生电磁脉冲。根据各种应用对光导开关性能指标的不同要求，将其归纳为大功率脉冲应用与超短电磁脉冲应用两类。阐述了光电导开关在理论、实用化方面遇到的问题以及目前学术界、业界对其解决的方法。对各种解决方法做出评价并展望光导开关未来发展趋势。
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| 关 键 词： | 光电导开关 锁定现象 综述 使用寿命 碳化硅 |
Problems and Development Trends of Photoconductive Semiconductor Switches |
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| LI Yin-xin,SU Wei. Problems and Development Trends of Photoconductive Semiconductor Switches[J]. Journal of Terahertz Science and Electronic Information Technology, 2009, 7(1): 56-60 |
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| Authors: | LI Yin-xin SU Wei |
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| Affiliation: | (Institute of Electronie Engineering, China Academy of Engineering Physics, Mianyang Sichuan621900, China) |
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| Abstract: | Photoconductive Semiconductor Switches（PCSS） are potential in generation of high-power impulse due to the unique performance compared with traditional high-power pulsed devices. Electromagnetic impulse can be generated directly from DC source by PCSS. The applications of PCSS are divided into categories of large current impulse and ultra-short impulse based on the different performance requirements. Details of difficulties and solutions are given in both theoreties and industrial applications. Comments on the solutions are made and the developing tendency of PCSS is expected. |
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| Keywords: | Photoconductive Semiconductor Switches lock-on effect review lifetime SiC |
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