Investigation of Ti-Ge/GaAs Schottky barrier contacts |
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| Authors: | A. P. Bibilashvili A. B. Gerasimov Z. D. Samadashvili L. G. Chopozov |
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| Affiliation: | (1) Dzhavakhishvili State University of Tbilisi, pr. Chavchavadze 3, 380028 Tbilisi, Georgia |
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| Abstract: | The effect of germanium content in a titanium film, as well as treatment methods and conditions, on the Schottky barrier height (φb) and the ideality factor (n) for Ti-Ge / GaAs contacts were investigated. It is shown that photon treatment provides better contacts than thermal treatment. |
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