ICP dry etching of ZnO and effects of hydrogen |
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| Authors: | K Ip M E Overberg K W Baik R G Wilson S O Kucheyev J S Williams C Jagadish F Ren Y W Heo D P Norton J M Zavada S J Pearton |
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| Affiliation: | a Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA;b Consultant, Stevenson Ranch, CA 91381, USA;c Department of Electronic Materials Engineering, Australian National University, Canberra ACT 0200, Australia;d Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA;e US Army Research Office, Research Triangle Park, NC 27709, USA |
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| Abstract: | Two different plasma chemistries for etching ZnO were examined. Both Cl2/Ar and CH4/H2/Ar produced etch rates which increased linearly with rf power, reaching values of  1200 Å/min for Cl2/Ar and 3000 Å/min for CH4/H2/Ar. The evolution of surface morphology, surface composition, and PL intensity as a function of energy during etching were monitored. The effect of H in ZnO was studied using direct implantation at doses of 1015–1016 cm−2, followed by annealing at 500–700 °C. The hydrogen shows significant outdiffusion at 500 °C and is below the detection limits of SIMS after 700 °C anneals. SEM of the etched features showed anisotropic sidewalls, indicative of an ion-driven etch mechanism. |
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