Solid-state diffusion bonding of silicon nitride using titanium foils

This article presents an effective way to control the interfacial reaction during solid-state diffusion bonding of silicon nitride (Si₃N₄) using titanium foils. The interfacial structure and its growth kinetics were analyzed in detail with scanning electron microscopy (SEM), electron-probe microanalysis (EPMA), and X-ray diffraction (XRD). The actual phase sequence of the joint interfaces bonded at temperatures between 1473 and 1673 K is concluded to be Si₃N₄/Ti₅Si₃(N)/α-Ti(N)+Ti₅Si₃(N), which is different from the phase sequence observed at room temperature after bonding. The joints are very weak due to the formation of a brittle Ti₅Si₃(N) layer at the interface. To suppress the growth of the Ti₅Si₃ layer, a nitrogen-solution treatment of titanium foils prior to each bonding experiment is implemented. Although a perfect prevention of the Ti₅Si₃(N) layer formation is not achieved with this treatment, it is shown that the growth of the layer is effectively suppressed enough to improve the joint strength to a level 3 times higher than the case in which pure titanium is employed.